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11/30/10 IRFHS8242PBF hexfet power mosfet notes through are on page 2 features and benefits www.irf.com 1 applications ?
note form quantit y irfhs8242trpbf pqfn 2mm x 2mm ta p e and reel 4000 irfhs8242tr2pbf pqfn 2mm x 2mm ta p e and reel 400 orderable part number package type standard pac k features resultin g benefits low r dson ( 13.0m ?) lower conduction losses low thermal resistance to pcb ( 13c/w) enable better thermal dissipation low profile ( 1.0 mm) results in increased power density compatible with existing surface mount techniques easier manufacturin g rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear deratin g factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.1 0.02 1.3 max. 9.9 17 84 20 25 8.0 21 8.5 v w a c 2mm x 2mm pqfn g 3 s d2 d1 4s 5d 6d top view d v ds 25 v v gs max 20 v r ds(on) max (@v gs = 10v) 13.0 m ? q g (t y pical) ( @ v gs = 4.5v) 4.3 nc i d (@t c(bottom) = 25c) 8.5 a

2 www.irf.com d s g repetitive rating; pulse width limited by max. junction temperature. current limited by package. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board r is measured at t j of approximately 90c. for design aid only, not subject to production testing. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 18 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 10.0 13.0 ??? 17.0 21.0 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -6.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 19 ??? ??? s q g total gate char g e ??? 4.3 ??? nc q g total gate char g e ??? 10.4 ??? v ds = 13v q gs gate-to-source char g e ??? 1.8 ??? q gd gate-to-drain char g e ??? 1.6 ??? r g gate resistance ??? 1.9 ??? ? t d(on) turn-on delay time ??? 6.5 ??? t r rise time ??? 19 ??? t d(off) turn-off delay time ??? 5.4 ??? t f fall time ??? 5.3 ??? c iss input capacitance ??? 653 ??? c oss output capacitance ??? 171 ??? c rss reverse transfer capacitance ??? 78 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 11 17 ns q rr reverse recovery charge ??? 11 17 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 25a v gs = 4.5v, i d = 6.8a m ? v dd = 13v, v gs = 4.5v v gs = 4.5v, v ds = 13v, i d = 8.5a r g =1.8 ? v ds = 10v, i d = 8.5a v ds = 20v, v gs = 0v, t j = 125c a i d = 8.5a (see fig. 6 & 16) i d = 8.5a v gs = 0v v ds = 10v v ds = 20v, v gs = 0v t j = 25c, i f = 8.5a , v dd = 13v di/dt = 280 a/s t j = 25c, i s = 8.5a , v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.17 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 8.5a ??? ??? 84 ??? ??? 8.5 mosfet symbol na ns a pf nc v gs = 10v v gs = 20v v gs = -20v th erma l r es i stance parameter typ. max. units r jc (bottom) junction-to-case ??? 13 r jc (top) junction-to-case ??? 90 c/w r ja junction-to-ambient ??? 60 r ja junction-to-ambient (<10s) ??? 42

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.5a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681012 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v v ds = 5.0v i d = 8.5a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 4.0v 3.5v 3.0v bottom 2.7v

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 i d , d r a i n c u r r e n t ( a ) limited by package 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc limited by wire bond -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a

www.irf.com 5 fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 14. typical power vs. time fig 15.

for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 500 600 s i n g l e p u l s e p o w e r ( w ) 0 20 40 60 80 100 i d , drain current (a) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 4.5v vgs = 10v 0 5 10 15 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 8.5a t j = 125c t j = 25c

6 www.irf.com fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 16a. gate charge test circuit fig 16b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s &' 1 (
# 0.1 + -

www.irf.com 7 pqfn 2x2 outline package details http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 2x2 outline part marking

8 www.irf.com pqfn 2x2 outline tape and reel

www.irf.com 9 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2010 data and specifications subject to change without notice. ms l 1 (per jede c j-s t d-020d ??? ) rohs compliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines )

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